Paper Titles

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors
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Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
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1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
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4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
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A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
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A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
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A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
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Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
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Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A 500V, Very High Current Gain (β=1517) 4H-SiC...

A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1165-1168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1165

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Online since:

June 2004

Authors:

Jian Hui Zhang, Peter Alexandrov, Jian Hui Zhao

Keywords:

Bipolar Junction Transistor (BJT), Darlington, Power Transistor, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[2] C-F Huang, J. A. Cooper, Jr.: IEEE Dev. Res. Conf. Digest, (2002), p.183.

[3] S. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour: IEEE Elec. Dev. Lett., Vol. 22, (2001), p.124.

[4] Y. Luo, J. Zhang, P. Alexandrov, L. Fursin, J. H. Zhao: IEEE 61st Dev. Res. Conf. Digest (2003), p.25.

[5] Y. Tang, and T.P. Chow: ISPSD-2003, p.383.

[6] S. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour: IEEE 58th Dev. Res. Conf. Digest (2000), p.133.

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6 150o C RT Ic (A) RT 150o C Vce (kV) Time (µs) RT 150o C Ib (A) Fig. 6 Half-bridge inverter switching waveforms for 4H-SiC Darlington BJT using SiC MPS freewheeling diode. The load was a 1mH inductor.