A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1165-1168

DOI:

10.4028/www.scientific.net/MSF.457-460.1165

Citation:

J. H. Zhang et al., "A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor", Materials Science Forum, Vols. 457-460, pp. 1165-1168, 2004

Online since:

June 2004

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6 150o C RT Ic (A) RT 150o C Vce (kV) Time (µs) RT 150o C Ib (A) Fig. 6 Half-bridge inverter switching waveforms for 4H-SiC Darlington BJT using SiC MPS freewheeling diode. The load was a 1mH inductor.

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