A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1169-1172

Citation:

J. H. Zhao et al., "A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V ", Materials Science Forum, Vols. 457-460, pp. 1169-1172, 2004

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June 2004

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2 Ic (A) Vce (kV) Time (µs) Ib (A) Fig. 7 Inductively-loaded halfbridge inverter switching for the high voltage BJT Darlington.

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