A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V

Jian Hui Zhao; Jian Hui Zhang; Peter Alexandrov; Terry Burke

doi:10.4028/www.scientific.net/MSF.457-460.1169

Paper Titles

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
p.1153

1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
p.1157

4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
p.1161

A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
p.1165

A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
p.1169

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
p.1173

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
p.1177

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
p.1185

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A High Voltage (1570V) 4H-SiC Bipolar Darlington...

A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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1169-1172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1169

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Online since:

June 2004

Authors:

Jian Hui Zhao, Jian Hui Zhang, Peter Alexandrov, Terry Burke

Keywords:

Bipolar Junction Transistor (BJT), Darlington, Power Transistor, Silicon Carbide (SiC)

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References

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2 Ic (A) Vce (kV) Time (µs) Ib (A) Fig. 7 Inductively-loaded halfbridge inverter switching for the high voltage BJT Darlington.

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