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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Deep Level Investigation by Current and...

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1185-1188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1185

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Online since:

June 2004

Authors:

M. Gassoumi, N. Sghaier, I. Dermoul, F. Chekir, H. Maaref, Jean Marie Bluet, Gérard Guillot, Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski

Keywords:

C-DLTS, I-DLTS, MESFET, Trap

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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