Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181
p.1181
Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
p.1185
p.1185
600V 4H-SiC RESURF-Type JFET
p.1189
p.1189
Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
p.1193
p.1193
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
p.1197
p.1197
Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
p.1201
p.1201
RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
p.1205
p.1205
High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
p.1209
p.1209
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
p.1213
p.1213
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Main Theme:
Edited by:
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages:
1197-1200
Citation:
L. X. Li and J. H. Zhao, "Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 1197-1200, 2004
Online since:
June 2004
Authors:
Keywords:
Price:
$38.00
Permissions: