Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

Li, Larry X.; Zhao, Jian H.

doi:10.4028/www.scientific.net/MSF.457-460.1197

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Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

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Periodical

Materials Science Forum (Volumes 457-460)

Main Theme

Silicon Carbide and Related Materials 2003

Edited by

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages

1197-1200

DOI

10.4028/www.scientific.net/MSF.457-460.1197

Citation

L. X. Li, J. H. Zhao, "Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 1197-1200, 2004

Online since

June 2004

Authors

Larry X. Li, Jian H. Zhao

Keywords

Numerical Simulation, Silicon Carbide (SiC), Vertical JFET

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$35.00

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