Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

Larry X. Li; Jian Hui Zhao

doi:10.4028/www.scientific.net/MSF.457-460.1197

Paper Titles

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
p.1185

600V 4H-SiC RESURF-Type JFET
p.1189

Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
p.1193

Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
p.1197

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
p.1201

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
p.1205

High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
p.1209

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
p.1213

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Design of 1.7 to 14 kV Normally-Off Trenched and...

Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

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Materials Science Forum (Volumes 457-460)

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1197-1200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1197

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Online since:

June 2004

Authors:

Larry X. Li, Jian Hui Zhao

Keywords:

Numerical Simulation, Silicon Carbide (SiC), Vertical JFET

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References

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