Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1197-1200

DOI:

10.4028/www.scientific.net/MSF.457-460.1197

Citation:

L. X. Li and J. H. Zhao, "Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC ", Materials Science Forum, Vols. 457-460, pp. 1197-1200, 2004

Online since:

June 2004

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$35.00

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