RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

Saptharishi Sriram; A. Ward; C. Janke; T.S. Alcorn; H. Hagleitner; Jason Henning; K. Wieber; Jason R. Jenny; Joseph J. Sumakeris; S.T. Allen

doi:10.4028/www.scientific.net/MSF.457-460.1205

Paper Titles

600V 4H-SiC RESURF-Type JFET
p.1189

Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
p.1193

Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
p.1197

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
p.1201

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
p.1205

High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
p.1209

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
p.1213

A 600V Deep-Implanted Gate Vertical JFET
p.1217

Single Contact-Material MESFETs on 4H-SiC
p.1221

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460RF Performance and Reliability of SiC MESFETs on...

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1205-1208

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1205

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Online since:

June 2004

Authors:

Saptharishi Sriram, A. Ward, C. Janke, T.S. Alcorn, H. Hagleitner, Jason Henning, K. Wieber, Jason R. Jenny, Joseph J. Sumakeris, S.T. Allen

Keywords:

MESFET, Reliability, RF Power, Silicon Carbide (SiC), Trapping

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References

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