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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A 600V Deep-Implanted Gate Vertical JFET

A 600V Deep-Implanted Gate Vertical JFET

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1217-1220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1217

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Online since:

June 2004

Authors:

Makoto Mizukami, Osamu Takikawa, M. Murooka, Seiji Imai, Kozo Kinoshita, Tetsuo Hatakeyama, M. Tsukuda, W. Saito, I. Omura, Takashi Shinohe

Keywords:

High Voltage (HV), Implantation, Junction Field Effect Transistor (JFET), Low Loss, Low on Resistance, Silicon Carbide (SiC), Switching

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.1109/16.536819

[2] D. Peters, R. Scorner, P. Friedrichs, J. Volkl, H. Mitlehner, and D. Stephani: special issue for SiC in IEEE Trans. on Electron Devices, May 1999, in press.

DOI: 10.1109/16.748874

[3] Yo Tajima, Kazunori Kijima, and W. D. Kingery: J. Chem. Phys. Vol. 77 (1982), p.2592. Fig. 7 Turn-off wave form of the fabricated DI-VJFET. Fig. 6 SPoM images of the channel region of the DI-VJFET in on-state (a) and off-state (b).