A 600V Deep-Implanted Gate Vertical JFET

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1217-1220

Citation:

M. Mizukami et al., "A 600V Deep-Implanted Gate Vertical JFET", Materials Science Forum, Vols. 457-460, pp. 1217-1220, 2004

Online since:

June 2004

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DOI: https://doi.org/10.1109/16.536819

[2] D. Peters, R. Scorner, P. Friedrichs, J. Volkl, H. Mitlehner, and D. Stephani: special issue for SiC in IEEE Trans. on Electron Devices, May 1999, in press.

DOI: https://doi.org/10.1109/16.748874

[3] Yo Tajima, Kazunori Kijima, and W. D. Kingery: J. Chem. Phys. Vol. 77 (1982), p.2592. Fig. 7 Turn-off wave form of the fabricated DI-VJFET. Fig. 6 SPoM images of the channel region of the DI-VJFET in on-state (a) and off-state (b).