6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1213-1216

Citation:

J. H. Zhao et al., "6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs", Materials Science Forum, Vols. 457-460, pp. 1213-1216, 2004

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June 2004

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[1] J. H. Zhao, patent pending.

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DOI: https://doi.org/10.1109/ispsd.2002.1016171

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