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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4606A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted...

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1213-1216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1213

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Online since:

June 2004

Authors:

Jian Hui Zhao, Kiyoshi Tone, Larry X. Li, Peter Alexandrov, Leonid Fursin, M. Weiner

Keywords:

Edge Termination, Implantation, Self-Alignment, VJFET

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. H. Zhao, patent pending.

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