DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1225-1228

DOI:

10.4028/www.scientific.net/MSF.457-460.1225

Citation:

R. Jonsson et al., "DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors", Materials Science Forum, Vols. 457-460, pp. 1225-1228, 2004

Online since:

June 2004

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$35.00

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