DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

Rolf Jonsson; Qamar-ul Wahab; Staffan Rudner

doi:10.4028/www.scientific.net/MSF.457-460.1225

Paper Titles

High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
p.1209

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
p.1213

A 600V Deep-Implanted Gate Vertical JFET
p.1217

Single Contact-Material MESFETs on 4H-SiC
p.1221

DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
p.1225

Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications
p.1229

The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
p.1233

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
p.1237

Edge Termination Technique for SiC Power Devices
p.1241

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460DC and RF Performance of Insulating Gate 4H-SiC...

DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1225-1228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1225

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Online since:

June 2004

Authors:

Rolf Jonsson, Qamar-ul Wahab, Staffan Rudner

Keywords:

Depletion Mode Transistors, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), RF Power Transistors

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References

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