DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1225-1228

Citation:

R. Jonsson et al., "DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors", Materials Science Forum, Vols. 457-460, pp. 1225-1228, 2004

Online since:

June 2004

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[4] Avant Corporation 3400 W. Warren Avenue, Fremont, CA 945386425, USA.

[5] R. Jonsson, Q. Wahab and S. Rudner, Trans tech publications, Vol. 338-342, p.1263, (2000).

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