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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Scattering Probabilities for Multiband Hole States...

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1237-1240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1237

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Online since:

June 2004

Authors:

A. Martinez, M. Hjelm, H.-E. Nilsson, Ulf Lindefelt

Keywords:

High Electric Field, Monte-Carlo, Scattering Probabilities

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] H-E. Nilsson et al., Physica B 314 (2002), p.68.

[2] A. Martinez et al., J. App. Phys. 93 (2003), p.9784.

[3] E. Fermi: Notes on Quantum Mechanics, (The University of Chicago Press, 1961).

[4] M. Lundstrom: Fundamentals of Carrier Transport, (Cambridge University Press, 2000) Fig. 4: Probability distribution for the same multiband initial state as in Fig. 3, but with overlap integral equal to one and with the two band components being in phase. Fig. 5: Same as in Fig. 4, but with a phase angle difference equal to π between the two band components.