Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1237-1240

DOI:

10.4028/www.scientific.net/MSF.457-460.1237

Citation:

A. Martinez et al., "Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1237-1240, 2004

Online since:

June 2004

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$35.00

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