Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1237-1240

Citation:

A. Martinez et al., "Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1237-1240, 2004

Online since:

June 2004

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[1] H-E. Nilsson et al., Physica B 314 (2002), p.68.

[2] A. Martinez et al., J. App. Phys. 93 (2003), p.9784.

[3] E. Fermi: Notes on Quantum Mechanics, (The University of Chicago Press, 1961).

[4] M. Lundstrom: Fundamentals of Carrier Transport, (Cambridge University Press, 2000) Fig. 4: Probability distribution for the same multiband initial state as in Fig. 3, but with overlap integral equal to one and with the two band components being in phase. Fig. 5: Same as in Fig. 4, but with a phase angle difference equal to π between the two band components.