Paper Titles

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
p.1237

Edge Termination Technique for SiC Power Devices
p.1241

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics
p.1245

A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
p.1249

A Highly Effective Edge Termination Design for SiC Planar High Power Devices
p.1253

Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
p.1257

The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
p.1263

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.1269

Recent Advances in (0001) 4H-SiC MOS Device Technology
p.1275

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A Highly Effective Edge Termination Design for SiC...

A Highly Effective Edge Termination Design for SiC Planar High Power Devices

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1253-1256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1253

Citation:

Cite this paper

Online since:

June 2004

Authors:

R. Pérez, Narcis Mestres, Servane Blanqué, Dominique Tournier, Xavier Jordá, Philippe Godignon, Roberta Nipoti

Keywords:

4H-SiC, Breakdown Voltage, Device Design, Edge Termination, pn Diodes

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: