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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A Long-Term Reliability of Thermal Oxides Grown on...

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1269-1274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1269

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Online since:

June 2004

Authors:

Junji Senzaki, M. Goto, Kazutoshi Kojima, Kikuo Yamabe, Kenji Fukuda

Keywords:

4H-SiC, Dielectric Breakdown, Metal Impurity, MOS Reliability, Surface Morphology, Thermal Oxide

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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