A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1269-1274

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J. Senzaki et al., "A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer", Materials Science Forum, Vols. 457-460, pp. 1269-1274, 2004

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June 2004

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[1] R. Kosugi, S. Suzuki, M. Okamoto, S. Harada, J. Snezaki and K. Fukuda: IEEE Electron Device Lett. Vol. 23 (2002), p.136.

[2] J. Senzaki, K. Kojima, S. Harada, R. Kosugi, T. Suzuki and K. Fukuda: IEEE Electron Device Lett. Vol. 23 (2002), p.13.

[3] K. Fukuda, J. Senzaki, K. Kojima and T. Suzuki: Mater. Sci. Forum Vols 433-436 (2003), p.567.

[4] S. Tanimoto, N. Kiritani, M. Hoshi, H. Okushi and K. Arai: Mater. Sci. Forum Vols. 433-436 (2003), p.725.

[5] C.J. Anthony, A.J. Jones and M.J. Uren: Mater. Sci. Engineering B61-62 (1999), p.460.

[6] M. Treu, E.P. Burte, R. Schörner, P. Friedrichs, D. Stephani and H. Ryssel: J. Appl. Phys. Vol. 84 (1998), p.2943.

[7] J. Nishio, M. Kushibe, K. Masahara, K. Kojima, T. Ohno, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai: Mater. Sci. Forum Vols. 389-393 (2002), p.215.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.215

[8] K. Fukuda, S. Suzuki, T. Tanaka and K. Arai: Appl. Phys. Lett. Vol. 76 (2000), P. 1585.

[9] J. Senzaki, K. Kojima, S. Harada, R. Kosugi, T. Suzuki and K. Fukuda: Jpn.J. Appl. Phys. 40 (2001), p. L1201.

[10] M. Lenzlinger and E.H. Snow: J. Appl. Phys. Vol. 40 (1969), p.278.

[11] P. Friedrichs, E.P. Burte and R. Schörner: Appl. Phys. Lett. Vol. 65 (1994), p.1665.

[12] C.Y. Chang and S.M. Sze: USLI Technology (The McGRAW-HILL Companies, INC., 1996).