Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1281-1286

Citation:

D. Ziane et al., "Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization ", Materials Science Forum, Vols. 457-460, pp. 1281-1286, 2004

Online since:

June 2004

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$38.00

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