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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Characterizations of SiC/SiO2 Interface Quality...

Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1281-1286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1281

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Online since:

June 2004

Authors:

D. Ziane, Jean Marie Bluet, Gérard Guillot, Philippe Godignon, Josep Montserrat, R.R Ciechonski, Mikael Syväjärvi, Rositza Yakimova, L. Chen, Philip Andrew Mawby

Keywords:

C-V, G-V, Interface States (or Traps), MOS, Sublimation Epitaxy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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