The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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1263-1268

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S. Dimitrijev, "The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material", Materials Science Forum, Vols. 457-460, pp. 1263-1268, 2004

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DOI: https://doi.org/10.1109/55.915604

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