Paper Titles

The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
p.1263

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.1269

Recent Advances in (0001) 4H-SiC MOS Device Technology
p.1275

Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
p.1281

Hall Effect Measurements in SiC Buried-Channel MOS Devices
p.1287

First-Principles Study of O Adsorption at SiC Surface
p.1293

Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
p.1297

Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
p.1301

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
p.1305

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Hall Effect Measurements in SiC Buried-Channel MOS...

Hall Effect Measurements in SiC Buried-Channel MOS Devices

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1287-1292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1287

Citation:

Cite this paper

Online since:

June 2004

Authors:

N.S. Saks, Sei Hyung Ryu

Keywords:

Buried-Channel, Hall Mobility, Inversion Layer, MOS, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Yano, T. Kimoto, H. Matsunami, M. Bassler, and G. Pensl: Mat. Sci. Forum Vols. 338-342, (2000), p.1109.

DOI: 10.4028/www.scientific.net/msf.338-342.1109

[2] K. Ueno and T. Oikawa: IEEE Electron Dev. Letts. Vol. 20 (1999), p.624.

[3] K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold, and D. Alok: IEEE Electron Dev. Letts. Vol. 22, (2001), p.212.

[4] S. Harada, S Suzuki, J Senzaki, R Kosugi, K Adachi, K Fukuda, K Arai, IEEE Electron Dev. Letts. Vol. 22 (2001).

[14] .

[5] S. Sheppard, M. Melloch, and J.A. Cooper Jr: IEEE Trans. Electron Dev. Vol. 41 (1994), p.1257.

[6] P.M. Shenoy and B.J. Baliga: IEEE Electron Dev. Letts Vol. 18 (1997), p.589.

[7] H. Li, S. Dimitrijev, H.B. Harrison, and D. Sweatman: Appl. Phys. Letts. Vol. 70 (1997), p. (2028).

[8] J.R. Williams, G.Y. Chung, C.C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R.A. Weller, S.T. Pantelides, O.W. Holland, M.K. Das, and L.C. Feldman: Mat. Sci. Forum Vols. 389-393 (2002), p.967.

DOI: 10.4028/www.scientific.net/msf.389-393.967

[9] For a definition of µFE, see S.C. Sun and J.D. Plummer: IEEE Trans. Electron Dev. Vol. ED-27, (1980), p.1497.

[10] W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour: Mater. Res. Soc. Symp. Proc. Vol. 339 (1994), p.595.

[11] D.K. Schroder: Semiconductor Material and Device Characterization, John Wiley & Sons, 1 st Ed., (1990), section 5. 3. 2.

[12] ibid., Eqs. 5. 33 and 5. 34.

[13] N.S. Saks: Mat. Res. Soc. Symp. Proc. Vol. 742 (2003), p.233.

[14] W. Suttrop, G. Pensl, W.J. Choyke, R. Stein, and S. Leibenzeder: J. Appl. Phys. Vol. 72 (1992), p.3708.