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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A Comparison between SiO2/4H-SiC Interface Traps...

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1305-1308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1305

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Online since:

June 2004

Authors:

H.Ö. Ólafsson, Christer Hallin, E.Ö. Sveinbjörnsson

Keywords:

(11-20) Face, Interface States (or Traps), MOS, Thermally Stimulated Current

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[5] G. Gudjonsson, H. Ö. Olafsson, E. Ö. Sveinbjörnsson, ICSCRM 2003. Fig. 4: The number density of trapped charge as a function of the electric field in the oxide during charging.