A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1305-1308

Citation:

H.Ö. Ólafsson et al., "A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces", Materials Science Forum, Vols. 457-460, pp. 1305-1308, 2004

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June 2004

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DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1001

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[5] G. Gudjonsson, H. Ö. Olafsson, E. Ö. Sveinbjörnsson, ICSCRM 2003. Fig. 4: The number density of trapped charge as a function of the electric field in the oxide during charging.

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