Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy

Thomas Seyller; Konstantin V. Emtsev; R. Graupner; Lothar Ley

doi:10.4028/www.scientific.net/MSF.457-460.1317

Paper Titles

Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
p.1301

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
p.1305

Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
p.1309

Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
p.1313

Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
p.1317

Oxidation Studies of Non-Polar 4H-SiC Surfaces
p.1321

Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
p.1325

A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
p.1329

Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
p.1333

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Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy

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Materials Science Forum (Volumes 457-460)

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1317-1320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1317

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Online since:

June 2004

Authors:

Thomas Seyller, Konstantin V. Emtsev, R. Graupner, Lothar Ley

Keywords:

a-Planes, Gate Dielectric, Oxidation, Photoelectron Spectroscopy

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