Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1317-1320

DOI:

10.4028/www.scientific.net/MSF.457-460.1317

Citation:

T. Seyller et al., "Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy", Materials Science Forum, Vols. 457-460, pp. 1317-1320, 2004

Online since:

June 2004

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$35.00

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