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Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
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Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
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Oxidation Studies of Non-Polar 4H-SiC Surfaces
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Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
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A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
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Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
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Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Carbon-Terminated 3C-SiC(100) Surface Oxidation...

Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1325-1328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1325

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Online since:

June 2004

Authors:

J. Roy, M. Silly, H. Enriquez, P. Soukiassian, C. Crotti, S. Fontana, P. Perfetti

Keywords:

Core Level Photoemission Spectroscopy, C-Rich SiC Surfaces, Interface, Oxidation, Oxide Products, Surface, Synchrotron Radiation (XRD)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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