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Oxidation Studies of Non-Polar 4H-SiC Surfaces
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Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
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A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
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Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
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Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
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Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
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Diluted Nitric Oxide (NO) Annealing of SiO₂/4H-SiC in Cold-Wall Oxidation Furnace
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Thermal Oxidation of 4H-Silicon Using the Afterglow Method
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Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Ellipsometric Study of Thermal Silicon Oxide and...

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1337-1340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1337

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Online since:

June 2004

Authors:

L. Chen, Owen James Guy, G. Pope, K.S. Teng, T. Maffeis, S.P. Wilks, Philip Andrew Mawby, T.E. Jenkins, A. Brieva, D.J. Hayton

Keywords:

Ellipsometric, LEED, Sacrificial Silicon Oxide, Silicon Carbide (SiC), UHV

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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