Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods

Hideno Mikami; Tomoaki Hatayama; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.457-460.1353

Paper Titles

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
p.1337

Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
p.1341

Diluted Nitric Oxide (NO) Annealing of SiO₂/4H-SiC in Cold-Wall Oxidation Furnace
p.1345

Thermal Oxidation of 4H-Silicon Using the Afterglow Method
p.1349

Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357

Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
p.1361

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

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Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1353-1356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1353

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Online since:

June 2004

Authors:

Hideno Mikami, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Anodic Oxidation, Fast Oxidation, pH Value, Room Temperature, XPS Spectrum

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