Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

Valeri V. Afanas'ev; S.A. Campbell; K.Y. Cheong; Florin Ciobanu; Sima Dimitrijev; Gerhard Pensl; Andre Stesmans; L. Zhong

doi:10.4028/www.scientific.net/MSF.457-460.1361

Paper Titles

Diluted Nitric Oxide (NO) Annealing of SiO₂/4H-SiC in Cold-Wall Oxidation Furnace
p.1345

Thermal Oxidation of 4H-Silicon Using the Afterglow Method
p.1349

Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357

Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
p.1361

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
p.1373

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
p.1377

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Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1361-1364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1361

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Online since:

June 2004

Authors:

Valeri V. Afanas'ev, S.A. Campbell, K.Y. Cheong, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans, L. Zhong

Keywords:

Insulating Stack, Interface States (or Traps), Silicon Oxynitride, Thermal Oxidation

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