Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1361-1364

DOI:

10.4028/www.scientific.net/MSF.457-460.1361

Citation:

V. V. Afanas'ev et al., "Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)", Materials Science Forum, Vols. 457-460, pp. 1361-1364, 2004

Online since:

June 2004

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$35.00

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