Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination

D.O. Stodilka; B.P. Gila; C.R. Abernathy; E. Lambers; F. Ren; Stephen J. Pearton

doi:10.4028/www.scientific.net/MSF.457-460.1377

Paper Titles

Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
p.1361

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
p.1373

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
p.1377

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
p.1381

Development of 10 kV 4H-SiC Power DMOSFETs
p.1385

Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET
p.1389

Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC
p.1393

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Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1377-1380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1377

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Online since:

June 2004

Authors:

D.O. Stodilka, B.P. Gila, C.R. Abernathy, E. Lambers, F. Ren, Stephen J. Pearton

Keywords:

AES, Aluminum Nitride (AlN), Interface, MBE, Nanocrystalline

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References

[1] J.D. Hartman, A.M. Roskowski, Z.S. Reitmeier, K.M. Tracy, R.F. Davis and R.J. Nemanich: J. Vac. Sci. Technol. A, 21(2), (2003) p.394.

Google Scholar

[2] N. Onojima, J. Suda and H. Matsunami: J. of Crystal Growth, 237-239, (2002) p.1210.

Google Scholar

[3] K.K. Harris, B.P. Gila, J. Deroaches, K.N. Lee, J.D. MacKenzie, C.R. Abernathy, F. Ren and S.J. Pearton: J. Electochem. Soc., 149, (2002) p.1128.

Google Scholar

[4] C.L. Aardahl, J.W. Rogers, H.K. Yun, Y. Ono, D.J. Tweet, S.T. Hsu: Thin Solid Films, 346, (1999) p.174.

DOI: 10.1016/s0040-6090(98)01618-6

Google Scholar

[5] A.R. Olszyna, A. Sokolowska, J. Szmidt, A. Werbowy and M. Barkowski: Intern. J. of Inorg, Mat., 3, (2001) p.1311.

Google Scholar