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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Self-Aligned Short-Channel Vertical Power DMOSFETs...

Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1393-1396

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1393

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Online since:

June 2004

Authors:

M. Matin, Asmita Saha, James A. Cooper

Keywords:

DMOS, Self-Aligned, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] K. Ueno, U.S. Patent No. 6, 238, 980, May 29, (2001).

[2] J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, IEEE Electron Device Lett., 18, 93 (1997).

[3] G. Y. Chung, C. C. Tin, and J. R. Williams, Appl. Phys. Lett., 76, 1713, (2000).