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Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
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A P-Channel MOSFET on 4H-SiC
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Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1405-1408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1405

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Online since:

June 2004

Authors:

Takeshi Ohshima, Kin Kiong Lee, Yuuki Ishida, Yasunori Tanaka, Kazutoshi Kojima, Tetsuo Takahashi, Masahito Yoshikawa, Hajime Okumura, Kazuo Arai, Toshio Kamiya

Keywords:

3C-SiC, Current Direction, N-Channel MOSFET

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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