Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1405-1408

DOI:

10.4028/www.scientific.net/MSF.457-460.1405

Citation:

T. Ohshima et al., "Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC", Materials Science Forum, Vols. 457-460, pp. 1405-1408, 2004

Online since:

June 2004

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