930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1413-1416

Citation:

W. Wang et al., "930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing", Materials Science Forum, Vols. 457-460, pp. 1413-1416, 2004

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June 2004

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