930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1413-1416

DOI:

10.4028/www.scientific.net/MSF.457-460.1413

Citation:

W. Wang et al., "930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing", Materials Science Forum, Vols. 457-460, pp. 1413-1416, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.