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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in...

930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1413-1416

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1413

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Online since:

June 2004

Authors:

W. Wang, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, Field-Effect Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), NO Annealing, RESURF

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[7] K. Chatty, S. Banerjee, T. P. Chow and R. J. Gutmann, Mater. Sci. Forum Vol. 338-342 (2000), p.1279 Fig. 6. Reported lateral MOSFETs in silicon and SiC compared to theoretical unipolar device limits.

DOI: 10.4028/www.scientific.net/msf.338-342.1279