Fabrication of 4H-SiC Double-Epitaxial MOSFETs

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1421-1424

Citation:

S. Harada et al., "Fabrication of 4H-SiC Double-Epitaxial MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1421-1424, 2004

Online since:

June 2004

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[3] 3. 5.

[40] 5 10 15 20 25 Drain Current (mA) Gate Voltage (V).

[25] oC 150 oC 300 oC Fig. 5. Temperature dependence of the drain current as a function of gate voltage in the DEMOSFET.

[10] [20] [30] [40] [50] [60] [70] [0] [20] [40] [60] [80] 100.

5 10 15 20 25 Drain Current (µA) Gate Voltage (V) Channel Mobility (cm2/Vs) µFE µeff ID Fig. 4. Transfer characteristics of the large lateral MOSFET formed on the same wafer.