Paper Titles

Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
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4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
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930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
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4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
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Fabrication of 4H-SiC Double-Epitaxial MOSFETs
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Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
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High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient
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Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
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Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1421-1424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1421

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Online since:

June 2004

Authors:

Shinsuke Harada, Mitsuo Okamoto, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Suzuki, Seiji Suzuki, Kenji Fukuda, Kazuo Arai

Keywords:

Buried Channel, DEMOSFET, Double-Epitaxial, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), On-State Resistance

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[2] D. Peters, R. Schöner, P. Friedrichs and D. Stephani: Mat. Sci. Forum Vols. 433-436 (2003), p.769.

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[4] R. Kosugi, S. Suzuki, M. Okamoto, S. Harada, J. Senzaki and K. Fukuda: IEEE Electron Device Lett. Vol. 23 (2002), p.136.

[5] S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda and K. Arai: IEEE Electron Device Lett. Vol. 22 (2001), p.272.

DOI: 10.1109/55.924839

0. 5.

[1] 1. 5.

[2] 2. 5.

[3] 3. 5.

[40] 5 10 15 20 25 Drain Current (mA) Gate Voltage (V).

[25] oC 150 oC 300 oC Fig. 5. Temperature dependence of the drain current as a function of gate voltage in the DEMOSFET.

[10] [20] [30] [40] [50] [60] [70] [0] [20] [40] [60] [80] 100.

5 10 15 20 25 Drain Current (µA) Gate Voltage (V) Channel Mobility (cm2/Vs) µFE µeff ID Fig. 4. Transfer characteristics of the large lateral MOSFET formed on the same wafer.