Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1433-1436

DOI:

10.4028/www.scientific.net/MSF.457-460.1433

Citation:

N. G. Wright et al., "Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1433-1436, 2004

Online since:

June 2004

Export:

Price:

$35.00

[1] N.G. Wright, C.M. Johnson and A.G. O'Neill, Solid-State Electronics 43, (1999), p.515.

[2] L. Kang, B. Hun, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi and J. C. Lee, IEEE Trans. Electron Device Letters, 21, 181 (2000).

[3] G.S. Higashi and C.G. Fleming, Appl. Phys. Lett. 55, 963 (1989).

[4] Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, C. M. Kwei, IEEE Trans Electron Device Letters, 21, 341 (2000).

In order to see related information, you need to Login.