Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Nicolas G. Wright; N. Poolamai; Konstantin Vassilevski; Alton B. Horsfall; C. Mark Johnson

doi:10.4028/www.scientific.net/MSF.457-460.1433

Paper Titles

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
p.1417

Fabrication of 4H-SiC Double-Epitaxial MOSFETs
p.1421

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
p.1425

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient
p.1429

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
p.1433

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
p.1437

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
p.1441

SiC JMOSFETs for High-Temperature Stable Circuit Operation
p.1445

Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
p.1451

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Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1433-1436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1433

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Online since:

June 2004

Authors:

Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson

Keywords:

High-k Dielectrics, SiC Device

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References

[1] N.G. Wright, C.M. Johnson and A.G. O'Neill, Solid-State Electronics 43, (1999), p.515.

Google Scholar

[2] L. Kang, B. Hun, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi and J. C. Lee, IEEE Trans. Electron Device Letters, 21, 181 (2000).

DOI: 10.1109/55.830975

Google Scholar

[3] G.S. Higashi and C.G. Fleming, Appl. Phys. Lett. 55, 963 (1989).

Google Scholar

[4] Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, C. M. Kwei, IEEE Trans Electron Device Letters, 21, 341 (2000).

Google Scholar