Paper Title:
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1433-1436
DOI
10.4028/www.scientific.net/MSF.457-460.1433
Citation
N. G. Wright, N. Poolamai, K. Vassilevski, A. B. Horsfall, C. M. Johnson, "Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1433-1436, 2004
Online since
June 2004
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Price
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Authors: Shuai Yang, Qing Wen Song, Xiao Yan Tang, Yi Meng Zhang, Yu Ming Zhang, Yi Men Zhang, Hao Yuan, Qiu Jie Sun
5.1: Rectifying Devices
Abstract:In this paper, a novel 4H-SiC trench JBS (TkJBS) with high-k semi-insulating polycrystalline silicon (SIPOS) is proposed. By adopting a new...
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