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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Evaluation of Trench Oxide Protection Techniques...

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

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Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1441-1444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1441

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Online since:

June 2004

Authors:

S.J. Rashid, Andrej Mihaila, F. Udrea, Rajesh Kumar Malhan, G. Amaratunga

Keywords:

Silicon Carbide (SiC), Trench MOSFET, Trench Oxide Protection, Ultra-High Voltage (UHV), UMOSFET

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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00 1. 00 2. 00 X (um).

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[10] 0 Y (um).

00 1. 00 2. 00 Velocity (cm/s) *10^7.

00 1. 00 2. 00 Velocity (cm/s) *10^7 saturation velocity of SiC indicating quasi−saturation of I(D) in the protected device at low V(D) electron velocity exceeds Fig. 8 Electon velocity in the top sectionof the UMOSFET, for VD = 100V, VG = 32V.