Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1441-1444

Citation:

S.J. Rashid et al., "Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs ", Materials Science Forum, Vols. 457-460, pp. 1441-1444, 2004

Online since:

June 2004

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00 1. 00 2. 00 X (um).

[2] 0.

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[10] 0 Y (um).

00 1. 00 2. 00 Velocity (cm/s) *10^7.

00 1. 00 2. 00 Velocity (cm/s) *10^7 saturation velocity of SiC indicating quasi−saturation of I(D) in the protected device at low V(D) electron velocity exceeds Fig. 8 Electon velocity in the top sectionof the UMOSFET, for VD = 100V, VG = 32V.