Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1437-1440

DOI:

10.4028/www.scientific.net/MSF.457-460.1437

Citation:

H. S. Lee et al., "Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K", Materials Science Forum, Vols. 457-460, pp. 1437-1440, 2004

Online since:

June 2004

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$35.00

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