Paper Titles

Fabrication of 4H-SiC Double-Epitaxial MOSFETs
p.1421

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
p.1425

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient
p.1429

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
p.1433

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
p.1437

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
p.1441

SiC JMOSFETs for High-Temperature Stable Circuit Operation
p.1445

Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
p.1451

Microscopic Structure and Electrical Activity of 4H-SiC/SiO₂ Interface Defects : an EPR Study of Oxidized Porous SiC
p.1457

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Simulation Study of 4H-SiC Junction-Gated MOSFETs...

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1437-1440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1437

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Online since:

June 2004

Authors:

Hyung Seok Lee, Sang-Mo Koo, Carl Mikael Zetterling, Erik Danielsson, Martin Domeij, Mikael Östling

Keywords:

4H-SiC, High-Temperature, I-V Characteristic, Junction Field Effect Transistor (JFET), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Simulation

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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