SiC JMOSFETs for High-Temperature Stable Circuit Operation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1445-1450

DOI:

10.4028/www.scientific.net/MSF.457-460.1445

Citation:

S.-M. Koo et al., "SiC JMOSFETs for High-Temperature Stable Circuit Operation", Materials Science Forum, Vols. 457-460, pp. 1445-1450, 2004

Online since:

June 2004

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$35.00

[1] C. -M. Zetterling: Process Technology for Silicon Carbide Devices, (EMIS Processing Series, INSPEC, IEE, London, UK, 2002).

[2] J.C. Zolper: Solid-State Electronics, vol. 42, (1998) p.2153.

[3] S. -M. Koo, S. -K. Lee, C. -M. Zetterling, M. Ostling, U. Forsberg, E. Janzén: Mater. Sci. Forum, vol. 389-393, (2002) p.1235.

DOI: 10.4028/www.scientific.net/msf.389-393.1235

[4] C. J. Scozzie, F. B. McLean, and J. M. McGarrity: Journal of Applied Physics, vol. 81, (1997) p.7687.

[5] H. -S. Lee, S. -M. Koo, C. -M. Zetterling, E. Danielsson, M. Domeij, and M. Ostling: This conference.

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