Paper Titles
High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient
p.1429
Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
p.1433
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
p.1437
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
p.1441
SiC JMOSFETs for High-Temperature Stable Circuit Operation
p.1445
Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
p.1451
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
p.1457
Porous Silicon Carbide as a Membrane for Implantable Biosensors
p.1463
Triangular Pore Formation in Highly Doped n-Type 4H SiC
p.1467

SiC JMOSFETs for High-Temperature Stable Circuit Operation

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1445-1450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1445

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Online since:

June 2004

Authors:

Sang-Mo Koo, Carl Mikael Zetterling, Hyung Seok Lee, Mikael Östling

Keywords:

4H-SiC, JMOSFET, Junction Field Effect Transistor (JFET)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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