Triangular Pore Formation in Highly Doped n-Type 4H SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1467-1470

DOI:

10.4028/www.scientific.net/MSF.457-460.1467

Citation:

Y. Shishkin et al., "Triangular Pore Formation in Highly Doped n-Type 4H SiC ", Materials Science Forum, Vols. 457-460, pp. 1467-1470, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.