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Triangular Pore Formation in Highly Doped n-Type 4H SiC

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Silicon Carbide and Related Materials 2003 View Preview

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1467-1470

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1467

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Online since:

June 2004

Authors:

Y. Shishkin, Wolfgang J. Choyke, Robert P. Devaty

Keywords:

Etching, Photoelectrochemical, Porous

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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