Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability

J. Bai; Govindhan Dhanaraj; Pelagia Irene Gouma; Michael Dudley; Marina G. Mynbaeva

doi:10.4028/www.scientific.net/MSF.457-460.1479

Paper Titles

Porous Silicon Carbide as a Membrane for Implantable Biosensors
p.1463

Triangular Pore Formation in Highly Doped n-Type 4H SiC
p.1467

Porous Structure of Anodized p-Type 6H SiC
p.1471

Vibrational and Emission Properties of Porous 6H-SiC
p.1475

Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability
p.1479

SiC Base Micro-Probe for Myocardial Ischemia Monitoring
p.1483

Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes
p.1487

Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector
p.1491

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination
p.1495

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Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1479-1482

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1479

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Online since:

June 2004

Authors:

J. Bai, Govindhan Dhanaraj, Pelagia Irene Gouma, Michael Dudley, Marina G. Mynbaeva

Keywords:

Chemical Sensor, Porous SiC, Thermal Stability

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