Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes

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Materials Science Forum (Volumes 457-460)

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1487-1490

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June 2004

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] Pierre Masri; Surface Science Reports 48 (2002) 1-51.

Google Scholar

[2] F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G. Fuochi, C. Lanzieri, M. Glaser; Nuclear Instruments and Methods in Physics Research A, Article in press.

DOI: 10.1016/s0168-9002(02)01558-9

Google Scholar

[3] U. Zimmermann, A. Hallen, B. Breitholtz; Materials Sc. Forum 338-342 (2000) p.1323.

Google Scholar

[4] R. Patel, V. Khemka, N. Ramungul, T.P. Chow, M. Ghezzo and J. Kretchmer; Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, p.387.

DOI: 10.1109/ispsd.1998.702724

Google Scholar

[5] T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara, R.P. Devaty, W.J. Choyke; Diamond and related materials 6 (1997) p.1333.

DOI: 10.1016/s0925-9635(97)00108-8

Google Scholar

[6] Qing-An Huang, Dayou Sun and Jonny K.O. Sin; Applied Surface Science 171 (2001) p.57. ½.

Google Scholar