Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1503-1506

DOI:

10.4028/www.scientific.net/MSF.457-460.1503

Citation:

A. Le Donne et al., "Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers ", Materials Science Forum, Vols. 457-460, pp. 1503-1506, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.