Paper Titles

Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes
p.1487

Demonstration of the First 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodector
p.1491

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination
p.1495

Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers
p.1499

Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
p.1503

Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
p.1507

Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
p.1511

Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
p.1515

Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
p.1519

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Electrical and Optical Characterization of...

Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1503-1506

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1503

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Online since:

June 2004

Authors:

Alessia Le Donne, Simona Binetti, Maurizio Acciarri, Antonio Castaldini, Filippo Nava, Anna Cavallini, Sergio Pizzini

Keywords:

4H-SiC, DLTS, Electron Irradiation, Minority Carriers Diffusion Length, PL

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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