Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1511-1514

Citation:

R. L. Myers-Ward et al., "Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates ", Materials Science Forum, Vols. 457-460, pp. 1511-1514, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] C.H. Carter et al: Materials Science Forum 353-356 3-6, Trans Tech Pub., Switzerland (2001).

[2] J.P. Bergman, et al: Materials Science Forum 353-356 299-302, Trans Tech Pub., Switzerland (2001).

[3] S. E. Saddow, et al: Mat. Res. Soc. Symp. Proc. Vol. 535 (1999), p.107.

[4] K.D. Hobart, F.J. Kub, et al: J. Electrochem Society Vol. 146 (10) (1999), p.3833.

[5] S. E. Saddow, G. Carter, et. Al: Materials Science Forum 338-342 245-248, Trans Tech Pub., Switzerland (2000).