Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates

Rachael L. Myers-Ward; Stephen E. Saddow; Shailaja P. Rao; Karl D. Hobart; M. Fatemi; Francis J. Kub

doi:10.4028/www.scientific.net/MSF.457-460.1511

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Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers
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Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
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Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
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Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Development of 3C-SiC SOI Structures using Si on...

Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1511-1514

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1511

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Online since:

June 2004

Authors:

Rachael L. Myers-Ward, Stephen E. Saddow, Shailaja P. Rao, Karl D. Hobart, M. Fatemi, Francis J. Kub

Keywords:

3C-SiC, Chemical Vapor Deposition (CVD), SOI

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References

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