Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1511-1514

DOI:

10.4028/www.scientific.net/MSF.457-460.1511

Citation:

R. L. Myers-Ward et al., "Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates ", Materials Science Forum, Vols. 457-460, pp. 1511-1514, 2004

Online since:

June 2004

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$35.00

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