Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique

Xiao An Fu; J. Dunning; Christian A. Zorman; Mehran Mehregany

doi:10.4028/www.scientific.net/MSF.457-460.1519

Paper Titles

Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
p.1503

Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode
p.1507

Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
p.1511

Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
p.1515

Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
p.1519

Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices
p.1523

Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film
p.1527

Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
p.1531

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
p.1537

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Young's Modulus and Residual Stress of...

Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1519-1522

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1519

Citation:

Cite this paper

Online since:

June 2004

Authors:

Xiao An Fu, J. Dunning, Christian A. Zorman, Mehran Mehregany

Keywords:

Bulge Test, LPCVD, Poly-SiC, Residual Stress, Young's Modulus

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] X.A. Fu, J.L. Dunning, C.A. Zorman and M. Mehregany: these proceedings.

Google Scholar

[2] C.A. Zorman, S. Rajgopal, X.A. Fu, R. Jezeski, J. Melzak and M. Mehregany: Electrochem. Solid State Lett. Vol. 5 (2002), p. G99.

DOI: 10.1149/1.1506461

Google Scholar

[3] L. Tong and M. Mehregany: Appl. Phys. Lett. Vol. 60 (1992), p.2992.

Google Scholar

[4] M. Mehregany, L. Tong, L.G. Matus and D.J. Larkin: IEEE Trans. Elect. Dev. Vol. 44 (1997), p.74.

Google Scholar

[5] J.S. Mitchell, C.A. Zorman, T. Kicher, S. Roy and M. Mehregany: J. Aerospace Eng. Vol. 16 (2003), p.46.

Google Scholar

[6] J.Y. Pan, P. Lin, F. Maseeh and S.D. Senturia: Technical Digest, IEEE Solid-State Sensor and Actuator Workshop, Hilton Head, SC, (1990), p.70.

DOI: 10.1109/solsen.1990.109820

Google Scholar

[7] Y. Gianchandani and K. Najafi: J. Microelectromechanical Systems Vol. 5 (1996), p.52.

Google Scholar