Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film

K. Rajanna; S. Tanaka; Toshio Itoh; Masayoshi Esashi

doi:10.4028/www.scientific.net/MSF.457-460.1527

Paper Titles

Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
p.1511

Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
p.1515

Young's Modulus and Residual Stress of Polycrystalline 3C-SiC Films Grown by LPCVD and Measured by the Load-Deflection Technique
p.1519

Characterization of Polycrystalline SiC Thin Films for MEMS Applications using Surface Micromachined Devices
p.1523

Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film
p.1527

Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
p.1531

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
p.1537

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
p.1541

Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
p.1545

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Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1527-1530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1527

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Online since:

June 2004

Authors:

K. Rajanna, S. Tanaka, Toshio Itoh, Masayoshi Esashi

Keywords:

Bond Strength Measurement, Micro-Electromechanical System (MEMS), Microstructured Silicon Carbide, Reaction Bonding, Reactive Ion Etching

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References

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