Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT

Matthias Bickermann; Boris M. Epelbaum; Albrecht Winnacker

doi:10.4028/www.scientific.net/MSF.457-460.1541

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Reaction Bonding of Microstructured Silicon Carbide using Polymer and Silicon Thin Film
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Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
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Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
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Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
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Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
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X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃
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Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
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Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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1541-1544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1541

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Online since:

June 2004

Authors:

Matthias Bickermann, Boris M. Epelbaum, Albrecht Winnacker

Keywords:

Al Precipitation, AlN Single Crystal, Optical Property, Resistivity, Structural Quality

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