X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH3

L. YingShen; S. Hashimoto; Koji Abe; R. Hayashibe; Takanobu Yamagami; Masato Nakao; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.457-460.1549

Paper Titles

Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates
p.1531

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
p.1537

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
p.1541

Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
p.1545

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃
p.1549

Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
p.1553

Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
p.1557

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
p.1561

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
p.1565

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X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1549-1552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1549

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Online since:

June 2004

Authors:

L. YingShen, S. Hashimoto, Koji Abe, R. Hayashibe, Takanobu Yamagami, Masato Nakao, Kiichi Kamimura

Keywords:

Nitridation, Silicon Carbide (SiC), X-Ray Photoelectron Spectroscopy (XPS)

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