In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer

Takaya Suzuki; T. Inushima

doi:10.4028/www.scientific.net/MSF.457-460.1565

Paper Titles

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃
p.1549

Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
p.1553

Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
p.1557

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
p.1561

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
p.1565

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
p.1569

Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
p.1573

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
p.1577

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
p.1581

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In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1565-1568

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1565

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Online since:

June 2004

Authors:

Takaya Suzuki, T. Inushima

Keywords:

Aluminum Nitride (AlN), In Situ Monitoring, MOCVD, Pyrometer, Silicon Carbide (SiC)

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References

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