Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1577-1580

Citation:

F. Fossard et al., "Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 1577-1580, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] S. Nakamura and G. Fasol, The blue laser diode (Springer, Berlin, 1997).

[2] L. Liu and J.H. Edgar, Materials Science and Engineering R 37, 61 (2002).

[3] G. Galli, A. Catellani and F. Gygi, Phys. Rev. Lett. 83, 2006 (1999).

[4] G. Mula, C. Adelmann, S. Moehl, J. Oullier and B. Daudin, Phys. Rev. B 64, 195406 (2001).

[5] A.R. Smith, R.M. Feenstra, D.W. Greeve, M. -S. Shin, M. Skowronski, J. Neugebauer and J.E. Northrup, Appl. Phys. Lett. 72, 2114 (1998).

[6] H. Larèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont and P. Gibart, J. Appl. Phys. 87, 577 (2000).

[7] J. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, Le Si Dang, E. Sarigiannidou, J. -L. Rouvière, G. Feuillet and B. Daudin, Phys. Stat. Sol., in press.

DOI: https://doi.org/10.1002/pssb.200303268

[8] A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino and S. Nakamura, J. Appl. Phys. 81, 417 (1997).

Fetching data from Crossref.
This may take some time to load.