Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1577-1580

DOI:

10.4028/www.scientific.net/MSF.457-460.1577

Citation:

F. Fossard et al., "Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 1577-1580, 2004

Online since:

June 2004

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$35.00

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