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In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
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Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
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Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
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GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
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Growth and Field Emission of GaN Nanowires
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Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Direct Growth of High Quality GaN by Plasma...

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1577-1580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1577

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Online since:

June 2004

Authors:

F. Fossard, J. Brault, N. Gogneau, Eva Monroy, F. Enjalbert, Le Si Dang, E. Bellet-Amalric, Sylvain Monnoye, B. Daudin, Hugues Mank

Keywords:

Epitaxy, Nitride, Photoluminescence (PL), X-Ray Diffraction (XRD)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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