Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE

Eva Monroy; E. Sarigiannidou; F. Fossard; E. Enjalbert; N. Gogneau; E. Bellet-Amalric; J. Brault; J.-L. Rouvière; Le Si Dang; Sylvain Monnoye; Hugues Mank; B. Daudin

doi:10.4028/www.scientific.net/MSF.457-460.1573

Paper Titles

Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
p.1557

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
p.1561

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
p.1565

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
p.1569

Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
p.1573

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
p.1577

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
p.1581

Growth and Field Emission of GaN Nanowires
p.1585

Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
p.1589

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Growth of N-Face Polarity III-Nitride...

Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1573-1576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1573

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Online since:

June 2004

Authors:

Eva Monroy, E. Sarigiannidou, F. Fossard, E. Enjalbert, N. Gogneau, E. Bellet-Amalric, J. Brault, J.-L. Rouvière, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin

Keywords:

Gallium Nitride (GaN), MBE, Polarity, Silicon Carbide (SiC)

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References

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