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Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
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In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
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Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
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Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Towards High-Quality AlN/SiC Hetero-Interface by...

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1569-1572

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1569

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Online since:

June 2004

Authors:

Norio Onojima, J. Kaido, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Aluminum Nitride (AlN), Interface States (or Traps), MIS, Molecular-Beam Epitaxy MBE, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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