Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates

Xu-Qiang Shen; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.457-460.1553

Paper Titles

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
p.1537

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
p.1541

Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
p.1545

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃
p.1549

Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates
p.1553

Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE
p.1557

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
p.1561

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
p.1565

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
p.1569

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Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates

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Materials Science Forum (Volumes 457-460)

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1553-1556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1553

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Online since:

June 2004

Authors:

Xu-Qiang Shen, Hajime Okumura

Keywords:

Aluminum Nitride (AlN), RF-MBE, Step-Bunching, Steps, Vicinal Sapphire (0001) Substrate

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