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Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Control of the 2D/3D Transition of Cubic GaN/AlN...

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1561-1564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1561

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Online since:

June 2004

Authors:

S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette

Keywords:

Cubic GaN Growth, Ga Surfactant Effect, PAMBE, Quantum Dot (QD)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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