GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1581-1584

Citation:

J. Napierala et al., "GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy", Materials Science Forum, Vols. 457-460, pp. 1581-1584, 2004

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June 2004

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