GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

J. Napierala; D.M. Martin; H.-J. Bühlmann; S. Gradecak; M. Ilegems

doi:10.4028/www.scientific.net/MSF.457-460.1581

Paper Titles

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer
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Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
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Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
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Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
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GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
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Growth and Field Emission of GaN Nanowires
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Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
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Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
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Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460GaN Laterally Overgrown on Sapphire by Low...

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

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Materials Science Forum (Volumes 457-460)

Pages:

1581-1584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1581

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Online since:

June 2004

Authors:

J. Napierala, D.M. Martin, H.-J. Bühlmann, S. Gradecak, M. Ilegems

Keywords:

Epitaxial Lateral Overgrowth, Gallium Nitride (GaN), Hydride Vapor Phase Epitaxy (HVPE)

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References

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