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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Intraband Transitions on GaN/AlN Quantum Wells...

Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1589-1592

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1589

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Online since:

June 2004

Authors:

A. Helman, M. Tchernycheva, K. Moumanis, A. Lusson, E. Warde, F.H. Julien, Eva Monroy, F. Fossard, B. Daudin, Le Si Dang

Keywords:

Group-III Nitrides, Intersubband Transitions, Quantum Well

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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