Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1589-1592

DOI:

10.4028/www.scientific.net/MSF.457-460.1589

Citation:

A. Helman et al., "Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 1589-1592, 2004

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June 2004

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