Paper Title:
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1589-1592
DOI
10.4028/www.scientific.net/MSF.457-460.1589
Citation
A. Helman, M. Tchernycheva, K. Moumanis, A. Lusson, E. Warde, F.H. Julien, E. Monroy, F. Fossard, B. Daudin, L. S. Dang, "Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates ", Materials Science Forum, Vols. 457-460, pp. 1589-1592, 2004
Online since
June 2004
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