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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Substrate Bias Amplification of a SiC Junction...

Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1507-1510

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1507

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Online since:

June 2004

Authors:

Shinji Nakagomi, M. Takahashi, Y. Kokubun, Lars Unéus, Susan Savage, H. Wingbrant, Mike Andersson, Ingemar Lundström, M. Löfdahl, Anita Lloyd Spetz

Keywords:

Buried Channel, Catalytic Gate, Gas Sensor, High-Temperature, Junction Field Effect Transistor (JFET), SIT, Substrate Bias

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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