Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1507-1510

DOI:

10.4028/www.scientific.net/MSF.457-460.1507

Citation:

S. Nakagomi et al., "Substrate Bias Amplification of a SiC Junction Field Effect Transistor with a Catalytic Gate Electrode ", Materials Science Forum, Vols. 457-460, pp. 1507-1510, 2004

Online since:

June 2004

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