Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1495-1498

Citation:

G. Brezeanu et al., "Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination ", Materials Science Forum, Vols. 457-460, pp. 1495-1498, 2004

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June 2004

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[1] H. Morkoç, S. Stritea, G. B. Gao, M.E. Lin, B. Sverdlov and M. Burns: J. Appl. Phys., vol. 76 (1994), pp.1363-1398.

[2] J J.T. Torvik, J.I. Pankove and B.J. Van Zeghbroeck, IEEE Trans. Electron. Dev., vol. 46 (1999), pp.1326-1331.

[3] G. Brezeanu, F. Udrea, G. Amaratunga, A. Mihaila, P. Godignon, J. Millan and M. Badila: Materials Science Forum, vols. 433-436 (2003), pp.827-830.

DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.965