Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Article Preview

Abstract:

You might also be interested in these eBooks

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1495-1498

Citation:

Online since:

June 2004

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Morkoç, S. Stritea, G. B. Gao, M.E. Lin, B. Sverdlov and M. Burns: J. Appl. Phys., vol. 76 (1994), pp.1363-1398.

Google Scholar

[2] J J.T. Torvik, J.I. Pankove and B.J. Van Zeghbroeck, IEEE Trans. Electron. Dev., vol. 46 (1999), pp.1326-1331.

DOI: 10.1109/16.772472

Google Scholar

[3] G. Brezeanu, F. Udrea, G. Amaratunga, A. Mihaila, P. Godignon, J. Millan and M. Badila: Materials Science Forum, vols. 433-436 (2003), pp.827-830.

DOI: 10.4028/www.scientific.net/msf.433-436.965

Google Scholar