Porous Structure of Anodized p-Type 6H SiC

Y. Shishkin; Yue Ke; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.457-460.1471

Paper Titles

Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
p.1451

Microscopic Structure and Electrical Activity of 4H-SiC/SiO₂ Interface Defects : an EPR Study of Oxidized Porous SiC
p.1457

Porous Silicon Carbide as a Membrane for Implantable Biosensors
p.1463

Triangular Pore Formation in Highly Doped n-Type 4H SiC
p.1467

Porous Structure of Anodized p-Type 6H SiC
p.1471

Vibrational and Emission Properties of Porous 6H-SiC
p.1475

Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability
p.1479

SiC Base Micro-Probe for Myocardial Ischemia Monitoring
p.1483

Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes
p.1487

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Porous Structure of Anodized p-Type 6H SiC

Porous Structure of Anodized p-Type 6H SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1471-1474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1471

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Online since:

June 2004

Authors:

Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Electrochemical (EC), Etching, Porous, p-Type

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References

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