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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Advanced Processing Techniques for Silicon Carbide...

Advanced Processing Techniques for Silicon Carbide MEMS and NEMS

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1451-1456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1451

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Online since:

June 2004

Authors:

Christian A. Zorman, Mehran Mehregany

Keywords:

3C-SiC, APCVD, LPCVD, Micro-Electromechanical System (MEMS), NEMS, Poly-SiC, Surface Micromachining

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] C.A. Zorman, S. Roy, C.H. Wu, A.J. Fleischman and M. Mehregany: J. Mat. Res. Vol. 13, (1998), p.406.

[2] P.M. Sarro: Sens. Actuators Vol. 82 (2000), p.210.

[3] C.R. Stoldt, C. Carraro, W.R. Ashurst, D. Gao, R.T. Howe and R. Maboudian: Sens. Actuators A, Vol. 97-98, (2002), p.410.

DOI: 10.1016/s0924-4247(01)00810-x

[4] C.A. Zorman, S. Rajgopal, X.A. fu, R. Jezeski, J. Melzak and M. Mehregany: Electrochem. Sol. State Lett. Vol. 5, (2002), p. G99.

DOI: 10.1149/1.1506461

[5] S. Roy. Ph.D. Dissertation, Case Western Reserve University, May (2001).

[6] M. Mehregany, C.A. Zorman, S. Roy, A.J. Fleischman, C.H. Wu and N. Rajan: Inter. Mat. Rev. Vol. 45 (2000) p.85.

[7] S. Roy, R.G. DeAnna, C.A. Zorman and M. Mehregany: IEEE Trans on Electron Dev. Vol. 49 (2002), p.2323.

DOI: 10.1109/ted.2002.807445

[8] R.F. Wiser, C.A. Zorman and M. Mehregany, in Proc. 12th Internat. Conf. on Solid State Sensors and Actuators, Boston MA, 2003, p.1164.

[9] A.A. Yasseen, C.H. Wu, C.A. Zorman and M. Mehregany: Elec. Dev. Lett. Vol. 21 (2000), p.164.

[10] X. Song, S. Rajgolpal, J.M. Melzak, C.A. Zorman and M. Mehregany: Mat. Sci. Forum Vol. 389-393 (2002), p.755.

[11] C.A. Zorman, A.J. Fleischman, A.S. Dewa, M. Mehregany, C. Jacob, S. Nishino and P. Pirouz: J. Appl. Phys Vol. 78 (1995), p.5136.

[12] X.H.M. Huang, K.L. Ekinci, Y.T. Yang, C.A. Zorman, M. Mehregany and M.L. Roukes, in Technical Digest 2002 Solid State Sensor, Actuator and Microsystems Workshop, Hilton Head SC, p.368.

DOI: 10.31438/trf.hh2002.92

[13] X.M.H. Huang, C.A. Zorman, M. Mehregany, and M.L. Roukes, Nature Vol 421 (2003), p.496.

[14] X.H.M. Huang, C.A. Zorman, M. Mehregany and M.L. Roukes: in Proc. 12th Internat. Conf. on Solid State Sensors and Actuators, Boston MA, 2003, p.722.

[15] X.H.M. Huang, M.K. Prakash, C.A. Zorman, M. Mehregany and M.L. Roukes: in Proc. 12th Internat. Conf. on Solid State Sensors and Actuators, Boston MA, 2003, p.342.